IXYS adds SiC diode to GenX3 IGBT portfolio

ChristyZ — Wed, 06 Oct 2021 22:45:51 GMT

Current Revision posted to Documents by ChristyZ on 10/6/2021 10:45:51 PM

Swiss corporation IXYS has announced the expansion of its family of 600V GenX3 IGBTs to include a portfolio with silicon carbide co-pack diodes.

Designed for applications like solar inverters and switch mode power supplies, the combination of products aims to create an efficient customer solution.

The GenX3 platform is manufactured using IXYS' HDMOS IGBT process and is optimised in two speed classes, both of which benefit from IXYS' Punch-Through technology that includes lower saturation voltage and lower energy losses.

Bradley Green, vice-president of international sales at IXYS, commented: "We are proud of our record in the realisation of high technology solutions to a world where efficiency and reliability are now the foremost design-in standards.

"Several years ago we pioneered the combination of our IGBTs with GaAs power rectifiers."

Dr. Nathan Zommer, chairman and chief executive officer of IXYS, is due to give a presentation at the forthcoming UBS Global Technology and Services Conference in New York City.