Cree announces demo of record efficiency transistor amp

e14news — Wed, 06 Oct 2021 22:49:00 GMT

Current Revision posted to Documents by e14news on 10/6/2021 10:49:00 PM

Semiconductor solutions provider Cree has announced the first public demonstration of a record-breaking 50 per cent efficient Doherty transistor amplifier.

Showcased at the 2009 IEEE/MTT-S International Microwave Symposium, the amplifiers combine Cree's latest 120W and 240W GaN HEMT transistors linearised with Texas Instruments' GC5325 processor.

Also on display from Cree were a 42 per cent efficient, 240W A/B amplifier and a 35 per cent efficient 870MHz 120W class A/B amplifier.

Jim Milligan, director of RF and microwave products at Cree, said the GaN HEMT transistors provide power, bandwidth and efficiency that other technologies are unable to provide.

"These demonstrations directly address the demand for higher-efficiency, broader-bandwidth HPAs in the small form factors necessary for emerging remote radio head and microcell applications," he added.

Held in Boston, the IEEE MTT-S International Microwave Symposium runs from June 7th until June 12th and will this year also feature demonstrations from Agilent Technologies.