Microchip 8 Mbit (x16) Multi-Purpose Flash Plus

doctorcdf — Tue, 13 Dec 2011 10:44:09 GMT

Current Revision posted to Documents by doctorcdf on 12/13/2011 10:44:09 AM

The SST39VF801C/802C and SST39LF801C/802C devices are 512K x16 CMOS Multi-Purpose Flash

Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability

compared with alternate approaches. The SST39VF801C/802C and SST39LF801C/802C write (Program

or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16

memories.

Featuring high performance Word-Program, the SST39VF801C/802C and SST39LF801C/802C

devices provide a typical Word-Program time of 7 µsec. These devices use Toggle Bit, Data# Polling,

or the RY/BY# pin to indicate the completion of Program operation. To protect against inadvertent

write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical

endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

The SST39VF801C/802C and SST39LF801C/802C devices are suited for applications that require

convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They

inherently use less energy during Erase and Program than alternative flash technologies. The total

energy consumed is a function of the applied voltage, current, and time of application. Since for any

given voltage range, the SuperFlash technology uses less current to program and has a shorter erase

time, the total energy consumed during any Erase or Program operation is less than alternative flash

technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of

Erase/Program cycles that have occurred. Therefore the system software or hardware does not have

to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST39VF801C/802C and SST39LF801C/802C

are offered in 48-lead TSOP, 48-ball TFBGA, and 48-ball WFBGA packages.

The SST39VF801C/802C and SST39LF801C/802C devices are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF801C/802C and SST39LF801C/802C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

Featuring high performance Word-Program, the SST39VF801C/802C and SST39LF801C/802C devices provide a typical Word-Program time of 7 µsec. These devices use Toggle Bit, Data# Polling, or the RY/BY# pin to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

The SST39VF801C/802C and SST39LF801C/802C devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST39VF801C/802C and SST39LF801C/802C are offered in 48-lead TSOP, 48-ball TFBGA, and 48-ball WFBGA packages.

SST39VF801C-70-4C-EKESST39VF801C-70-4C-EKE

SST39VF801C-70-4C-B3KESST39VF801C-70-4C-B3KE

SST39VF801C-70-4C-MAQESST39VF801C-70-4C-MAQE

SST39VF801C-70-4I-EKESST39VF801C-70-4I-EKE

SST39VF801C-70-4I-B3KESST39VF801C-70-4I-B3KE

Tags: 8_bit, microchip, flash_memory, memory, flash