<?xml-stylesheet type="text/xsl" href="https://community.element14.com/cfs-file/__key/system/syndication/rss.xsl" media="screen"?><rss version="2.0" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:slash="http://purl.org/rss/1.0/modules/slash/" xmlns:wfw="http://wellformedweb.org/CommentAPI/"><channel><title>Gallium Nitride vs Silicon in Soft Switching Comparative Study</title><link>/products/manufacturers/wuerth-elektronik/b/blog/posts/gallium-nitride-vs-silicon-in-soft-switching-comparative-study</link><description>Gallium Nitride (GaN) is a wide bandgap compound semiconductor formed by the combination of Gallium and Nitrogen with an atomic structure of wurtzite crystal. Due to its 3.4 eV (electron*Volt) band gap it can be used in optoelectronics (blue LEDs and</description><dc:language>en-US</dc:language><generator>Telligent Community 12</generator></channel></rss>