<?xml-stylesheet type="text/xsl" href="https://community.element14.com/cfs-file/__key/system/syndication/rss.xsl" media="screen"?><rss version="2.0" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:slash="http://purl.org/rss/1.0/modules/slash/" xmlns:wfw="http://wellformedweb.org/CommentAPI/"><channel><title>New technique ‘amps’ potential for gallium nitride electronics</title><link>/technologies/embedded/b/blog/posts/new-technique-amps-potential-for-gallium-nitride-electronics</link><description>Gallium nitride material holds promise for emerging high-power devices that are more energy efficient than existing technologies, but these GaN devices traditionally break down when exposed to high voltages. Now researchers at North Carolina State Un</description><dc:language>en-US</dc:language><generator>Telligent Community 12</generator></channel></rss>