Related Components for element14 Essentials: Semiconductors I

Semiconductors I: GaNFETs for Power Conversion

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The element14 Essentials of GaN FETs for Power Conversion covers the requirements of electronics in power conversion applications, the limitations of current solutions, and the potential for GaNFETs (Galium-Nitride Field Effect Transistors). To extend the knowledge covered in the main module, this supplementary guide discusses the types of related components used for prototyping or product development.

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Components

GAN063-650WSAQ Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole

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The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia's state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies—offering superior reliability and performance. AEC-Q101 qualified.

Ultra-low reverse recovery charge

Simple gate drive (0 V to +10 V or 12 V)

Robust gate oxide (±20 V capability)

Ultra-low reverse recovery chargeHigh gate threshold voltage (+4 V) for very good gate bounce immunity

Very low source-drain voltage in reverse conduction mode

Transient over-voltage capability (800 V)

AEC-Q101 qualified

GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

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The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

Simplified driver design, as standard level MOSFET gate drivers can be used:

0 V to 12 V drive voltage

Gate threshold voltage V_GSth of 4 V

Robust gate oxide with &plsumn;20 V VGS rating

High gate threshold voltage of 4 V for gate bounce immunity

Low body diode V_f for reduced losses and simplified dead-time adjustments

Transient over-voltage capability for increased robustness

CCPAK package technology:

Improved reliability, with reduced R_th(j-mb) for optimal cooling

Lower inductances for lower switching losses and EMI

175°C maximum junction temperature

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joints

GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 Package

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The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance. This product has been fully designed and qualified to meet AEC-Q101 requirements.

Fully automotive qualified to AEC-Q101:

175°C rating suitable for thermally demanding environments

Simplified driver design, as standard level MOSFET gate drivers can be used:

0 V to 12 V drive voltage

Gate threshold voltage V_GSth of 4 V

Robust gate oxide with &plsumn;20 V VGS rating

High gate threshold voltage of 4 V for gate bounce immunity

Low body diode V_f for reduced losses and simplified dead-time adjustments

Transient over-voltage capability for increased robustness

CCPAK package technology:

Improved reliability, with reduced R_th(j-mb) for optimal cooling

Lower inductances for lower switching losses and EMI

175°C maximum junction temperature

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joints

GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

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The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

Ultra-low reverse recovery charge

Simple gate drive (0 V to +10 V or 12 V)

Robust gate oxide (±20 V capability)

High gate threshold voltage (+4 V) for very good gate bounce immunity

Very low source-drain voltage in reverse conduction mode

Transient over-voltage capability

GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 Package

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The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

Simplified driver design, as standard level MOSFET gate drivers can be used:

0 V to 12 V drive voltage

Gate threshold voltage V_GSth of 4 V

Robust gate oxide with ±20 V V_GS rating

High gate threshold voltage of 4 V for gate bounce immunity

Low body diode V_f for reduced losses and simplified dead-time adjustments

Transient over-voltage capability for increased robustness

CCPAK package technology:

Improved reliability, with reduced R_th(j-mb) for optimal cooling

Lower inductances for lower switching losses and EMI

175°C maximum junction temperature

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joints

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