Osram Opto Semiconductors has reported a significant breakthrough in the development of its direct emitting green indium-gallium-nitride (InGaN) laser.
Current laboratory results suggest that it is already capable of achieving an optical output of 50 mW and emits light in true green with a wavelength of 515 nm, offering a more compact and stable alternative to currently-used technology.
In this range, efficient high-quality semiconductor lasers have been formerly available only as frequency-doubled versions, but Osram claims direct emitting green lasers could soon replace frequency-doubled lasers.
"With this demonstration, we have shown that green lasers can be manufactured from indium-gallium-nitride," commented Dr Christian Fricke, chief technology officer at the firm.
"This puts us on course to produce compact, cost-effective, high-quality green laser light sources."
Osram recently completed the illumination of its reception building in Regensburg, Germany with more than 4,500 white and coloured LEDs, demonstrating the technology's capacity to provide a range of options in lighting applications.