The new low-molecular material supports semiconductor fabrication of 20 nm process technology and above, which is also finer and more durable, reports EE Herald.
According to the news provider, Toshiba has stated that the high-resolution photoresist (photo-sensitive film) has been tested on positive and negative tone processes with successful results.
The company is quoted as saying that it can replace argon fluoride laser exposure apparatus and polymer photoresists.
It was reported that the resolution of such materials is important in the development of smaller chips.
This substance is used as a photo mask layer coated over Silicon wafers during the process, which is utilised in the preparation of blocks for illumination by extreme ultraviolet radiation, the website explained.
Last week, Toshiba and Toshiba Semiconductor announced that they will be forming a joint venture in China with Nantong Fujitsu Microelectronics, which is a major back-end process specialist.
