Lars Samuelson, director of the Nanometer Structure Consortium at Lund University in Sweden, has been working on the NODE project which has produced nanowires grown from the bottom up, as opposed to top down.
He explained that devices can often become full of defects if a chip is developed by this top-down approach.
Mr Samuelson noted that one of the major recent breakthroughs was enhancing the deposition of high-K dielectrics for coating the nanowires and serving as a dielectric in the wrap-gate transistors.
"There are many potential opportunities for developing new technologies. This vertical arrangement may be the route to 3D circuit design as well as to realise monolithic on-chip optoelectronics," he added.
The National Science Foundation in the US recently claimed that nanowires are the key to developing ultra-small transistors and semiconductors.
