The company eventually intends to use the chips in secure digital (SD) and embedded memory solutions, but will first introduce the technology as part of a 32 gigabyte multi-level cell flash memory device.
Its new innovation could be incorporated into its popular range of smartphones, such as the recently unveiled Samsung Wave.
Soo-In Cho, president of the organisation's Memory Division, highlighted the extent of the advances in its semiconductor technology.
He said: "In just one year, after initiating 30nm-class NAND production, Samsung has made available the next generation node 20nm-class NAND, which exceeds most customers requirements for high-performance, high-density NAND-based solutions."
Samples of SD cards using the new component have already been distributed by Samsung and it will produce a range of memory cards, from 4 gb to 64 gb versions.
Last week, Taiwan Semiconductor Manufacturing signalled its intention to bypass production of 22 nanometre components to begin making 20 nanometre versions.
