The Si7625DN is the first 30-V p-channel TrenchFet Gen III power metal oxide semiconductor field-effect transistor (Mosfet) in the company's PowerPAK 1212-8 package.
Commenting on the product, the firm said: "The lower on-resistance of the Si7625DN translates into lower power consumption, saving power and prolonging battery life between charges."
According to the organisation, this also brings down heat levels to ensure a reduced printed circuit board pad area.
Those looking to sample the technology are able to order now, although the enterprise noted it will be not be available in production quantities until the second quarter of 2010, with up to a 16-week lead time for larger orders.
It follows Vishay's unveiling of its inaugural p-channel TrenchFET Gen III power Mosfet in the chipscale Micro Foot range last month.
