US semiconductor company Vishay Intertechnology (Vishay) has released its TrenchFET power Mosfet products using low technology optimised for higher-voltage electronics.
The Pennsylvania-based manufacturer - one of the world's largest producers of discrete semiconductors, diodes, rectifiers and optoelectronics - has said that its new ThunderFET SiR880DP is the first 80 v version to have an "on-resistance at a 4.5 v gate drive".
According to the firm, this new component is made for primary side switching in do-to-dc converters found in point-of-load (POL) applications regularly used by organisations in the telecoms industry.
Furthermore, Vishay has claimed that its 4.5 v rating makes it "conducive to higher-frequency designs, enabling significantly lower gate drive losses in POL applications".
In addition, the SiR880DP's low on-resistance translates into lower energy consumption and more eco-friendly solutions, particularly with light load situations such as stand-by mode.
Samples and production quantities are available now to prospective customers with lead times of up to 16 weeks for larger orders.