Graphene Week 2011 is to feature discussions of semiconductors - in particular the silicon carbide (SiC) substrates on which the revolutionary material is grown, reports the European Science Foundation (ESF).
Russian-born Nobel Prize winner Andre Geim, who was presented with the accolade this year for "groundbreaking experiments regarding the two-dimensional material graphene", will be among those chairing the conference in April.
SiC - which naturally occurs in the rare form of moissanite and is also called carborundum - will be among the semiconductors discussed at the event.
Graphene is synthesised using SiC as a substrate, the ESF says, while it can also be produced through chemical and mechanical exfoliation.
Also due to be discussed at the event are the optical properties of the innovative material and its potential applications in optoelectronics.
Graphene Week 2011 is scheduled to take place from April 24th to 29th next year at Universitaetszentrum Obergurgl in Austria.