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Member Blogs How will GaN change the world of electronics design in the next decade?
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  • Author Author: rscasny
  • Date Created: 29 Aug 2019 8:40 PM Date Created
  • Views 924 views
  • Likes 7 likes
  • Comments 9 comments
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How will GaN change the world of electronics design in the next decade?

rscasny
rscasny
29 Aug 2019

Silicon has been the kingpin of the semiconductor industry for a long time. And it should be: it has an ideal crystal structure for use as a semiconductor, But in today's world where ultra-low power and an extremely small package are two important factors in electronics design, maybe silicon has sort of reached its limits. What's the alternative?

 

As a semiconductor material, gallium nitride (GaN) is getting the attention that silicon once had. GaN works will in high voltage and high temperature applications. Plus it has high switching frequencies than silicon and attractive for its high energy efficiency.

 

So, how will GaN change the world of electronics design in the next decade?

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Top Comments

  • Jan Cumps
    Jan Cumps over 5 years ago +2
    I've been validating GaN power FETS for a few years now. Checking Out GaN Half-Bridge Power Stage: Texas Instruments LMG5200 - Part 1: Preview I think they have a place together with silicon, won't replace…
  • dougw
    dougw over 5 years ago +1
    I am looking forward to using GaN devices in the near future because of their lower on resistance. It looks like you could come up with something closer to an ideal diode than what can be done today. GaN…
  • Jan Cumps
    Jan Cumps over 5 years ago in reply to clem57 +1
    clem57 wrote: Well the cost factor may be a little overrated. This is due to the process not being as mature as silcon manufacturing. But take a look at this article and set me straight, Jan Cumps . Clem…
Parents
  • Jan Cumps
    Jan Cumps over 5 years ago

    I've been validating GaN power FETS for a few years now.

    Checking Out GaN Half-Bridge Power Stage: Texas Instruments LMG5200 - Part 1: Preview

     

    I think they have a place together with silicon, won't replace it.

    GaN has some very good attributes that help fast switching - perfect for digital switching and switch mode power applications - and for some RF solutions.

    But GaN is several orders of magnitude more expensive to make than silicon (sand) - and that will be so forever.

    It has disadvantages too compared to silicon, making the devices more sensitive for particular failure modes and not the best choice for use in the linear (non-switched) range.

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  • clem57
    clem57 over 5 years ago in reply to Jan Cumps

    Well the cost factor may be a little overrated. This is due to the process not being as mature as silcon manufacturing. But take a look at this article and set me straight, Jan Cumps .

    Clem

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  • clem57
    clem57 over 5 years ago in reply to Jan Cumps

    Well the cost factor may be a little overrated. This is due to the process not being as mature as silcon manufacturing. But take a look at this article and set me straight, Jan Cumps .

    Clem

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  • Jan Cumps
    Jan Cumps over 5 years ago in reply to clem57

    clem57  wrote:

     

    Well the cost factor may be a little overrated. This is due to the process not being as mature as silcon manufacturing. But take a look at this article and set me straight, Jan Cumps  .

    Clem

    The article is stating costs specific for power applications. They don't specify why they mention lower prices, but it may be because you can use smaller or no heatsinks due to lower switching loss and capacitors and inductors can be smaller due to the higher switch frequency.

     

    Inherently, you can't source the base component GaN cheaper than Silicium. Even with improved processes. The cost of GaN wafers will very likely come down if the technology catches on. But silicon will still be simpler and easier to source - and is abundantly available.

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