SiC makes it possible to develop SBDs featuring faster speeds and high breakdown voltages that exceed 1200V (vs.150V with conventional silicon SBDs), resulting in significantly lower recovery loss when replacing existing mainstream FRDs (Fast Recovery Diodes). In addition, combining high power supply effficiency with high frequency drive enables support for smaller passive components such as coils, contributing to reduced noise.
Key Features
1) Ultra-low reverse recovery time (that cannot be achieved with silicon) supports higher switching speeds, while small Qrr (reverse recovery charge) reduces switching loss, contributing to end-product miniaturization.
2)Unlike silicon fast recovery diodes, where the trr increases with temperature, SiC makes it possible to maintain virtualy constant characteristics. This enables driving even at high temperatures with little to no switching loss.
ROHM provides a comprehensive support system for all of its products (which can be purchased online through Farnell).
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