ROHM has added 4-pin package models to its conventional SiC MOSFET lineup that maximizes the high-speed switching performance of SiC.
[4pin Package SiC MOSFET Lineup]
With conventional 3-pin MOSFETs, the effective gate voltage drops due to the voltage of the inductance component of the source terminal, making it impossible to obtain the desired switching speed.
Adopting a 4-pin package makes it possible to separate the driver and power source pins in order to minimize the effects of the inductance component. This maximizes the high-speed switching performance of SiC MOSFETs, further reducing loss.
As a result, the total turn ON and turn OFF losses can be decreased by 35%.
An evaluation board is available that enables evaluation of both 3-pin and 4-pin SiC devices.
[Evaluation board: P02SCT3040KR-EVK-001]