SiC power semiconductors deliver greater power efficiency, miniaturization, and higher voltage capability than the existing Si power devices.
In recent years, the growing demand for energy savings has resulted in the adoption of power semiconductors such as SiC in 400VAC industrial applications.
On the other hand, industrial equipment consists of the main power supply circuit and a built-in auxiliary power supply that supplies power to various control systems.
The use of low voltage Si-MOSFETS and IGBTs limits the amount of power savings in auxiliary power supply.
In response, ROHM has strived to lead the development of ICs that maximize the performance of SiC power semiconductors.
In 2015, the company became the first to offer AC/DC converter ICs for driving high voltage, low-loss SiC MOSFETs.
This time, we created the industry’s first AC/DC converter ICs with a built-in SiC MOSFET that will further accelerate the adoption of AC/DC converters that use SiC MOSFETs in industrial equipment.
ROHM's Solition
The BM2SCQ12xT-LBZ series integrate 1700V SiC MOSFET.
This series enables breakthrough energy savings and facilitates efficient AC/DC converter design by resolving many of the issues encountered by designers using discrete solutions.
Incorporating a SiC MOSFET and control circuitry optimized for auxiliary power supplies for industrial equipment in a single package significantly reduces the number of parts required when compared to the conventional designs (from 12pcs plus heat sink to a single IC).
It also aids to minimizing both the component failure risk and the amount of resources required to develop systems using SiC MOSFETs.
In addition, this product enables the improvement of power efficiency by 5% (and decreasing power loss by 28%).
These features translate to dramatic reduction in size, improved reliability, and superior power savings in industrial applications.
Breakthrough miniaturization and high efficiency
ROHM’s latest products replace up to 12 components (AC/DC converter IC, 800V Si MOSFET x 2, Zener diode x 3, resistor x 6) and the heat sink with a single package, dramatically reducing the number of external parts required.
In addition, the high withstand voltage and voltage noise resistance of the internal SiC MOSFET make it possible to reduce the size of components used for noise suppression.
High reliability
The monolithic design reduces the resources required for component selection and reliability evaluation for the clamp and drive circuits while also minimizing component failure risk and simplifying the development effort for SiC MOSFET adoption.
In addition, overload protection (FB OLP), overvoltage protection (VCC OVP) of the supply voltage pin, and a high accuracy thermal shutdown function (TSD) (achieved through the built-in SiC MOSFETs) are built in, along with the over current protection and secondary overvoltage protection functions.
This enables the incorporation of multiple protection circuits for industrial power supplies that require continuous operation hence leading to a significant improvement in system reliability.
Line up
BM2SCQ121T-LBZBM2SCQ121T-LBZ BM2SCQ122T-LBZBM2SCQ122T-LBZ BM2SCQ123T-LBZBM2SCQ123T-LBZ BM2SCQ124T-LBZBM2SCQ124T-LBZ
Application Examples
●General-purpose inverters ●AC servos ●PLCs (Programmable Logic Controllers) ●Manufacturing equipment ●Robots ●Industrial lighting (i.e. street lamps) ●Optimized for auxiliary power supply circuits in 400VAC industrial equipment
