FeRAM (Ferroelectric Random Access Memory)

MR44V064A

The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed

in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Serial Interface ( I2C BUS ).Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup

required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks,

such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and

the power consumption during a write can be reduced significantly.

The MR44V064A can be used in various applications, because the device is guaranteed for the write/read

tolerance of 10

cycles per bit and the rewrite count can be extended significantly.

The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire Serial Interface ( I2C BUS ).Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.

The MR44V064A can be used in various applications, because the device is guaranteed for the write/read tolerance of 10^12 cycles per bit and the rewrite count can be extended significantly.

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MR45V256A

The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.

The MR45V256A can be used in various applications, because the device is guaranteed for the write/read tolerance of 10^12 cycles per bit and the rewrite count can be extended significantly.

MR45V256AMAZAABMR45V256AMAZAAB

MR48V256A

The MR48V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.

The MR48V256A can be used in various applications, because the device is guaranteed for the write/read tolerance of 10^12 cycles per bit and the rewrite count can be extended significantly.

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