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Replacement IGBT

acdc90
acdc90 over 4 years ago

Hello

I replaced a dead Toshiba IGBT module MG75Q2YS50 that is used in a brake module on a old lathe connected to a vsd

i used a Semitrans SKM100GB12v (from E14)which died 1st time

i thought specs were close enough when comparing data sheets

 

modern (VSD motor drives ) have this circuit built in ( this is 1999 ) and has separate unit  model TG600

the bake unit is used to clamp the rectified mains voltage

when the motor is running there is 565vDC at this point (400vAC 3ph input )

when the motor is slowing down the brake unit IGBT turns on a load resister

when the voltage gets upto 650vdc

the load resister is 13ohm 10kw   used with a 37kw motor/vsd

so i have measured 42A when it failed

the gate trigger is driven by npn/pnp transisters which i removed to check

and also  checked the  snub caps + resister

 

can anyone advise this 1st time user on communities

any ideas where to go from here

Attachments:
imageMG75Q2YS50.pdf
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Top Replies

  • baldengineer
    baldengineer over 4 years ago +1 suggested
    Not being an expert on IGBTs, this might be the wrong path. But one thing that stands out for me is the significant difference in switching rise and fall times. It seems the Semikron is faster in both…
  • robogary
    robogary over 4 years ago +1 suggested
    At a glance, MG75Q2YS50 Gate Emitter Volts are 20V. The SKM100GB12V SKM100GB12V , V gate emitter is shown in a couple places one as as 6.5V, one as 15V . Maybe need to voltage divide the driver voltage…
  • geralds
    geralds over 4 years ago +1 suggested
    Hi acdc90 , ... hm, without a schematic representation, we cannot provide you with any specific help. Have you a schematic diagram that have drawn in voltage values, o-scope plotts, parameter values? Edit…
  • baldengineer
    0 baldengineer over 4 years ago

    Not being an expert on IGBTs, this might be the wrong path. But one thing that stands out for me is the significant difference in switching rise and fall times. It seems the Semikron is faster in both cases. (50ns vs. 38ns for rise, and 100-300 ns vs. 62ns for fall.)

     

    I wonder if the faster edge rates mean you need to modify the snubbing network?

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  • robogary
    0 robogary over 4 years ago

    At a glance, MG75Q2YS50   Gate Emitter Volts are 20V.

     

    The SKM100GB12VSKM100GB12V , V gate emitter is shown in a couple places one as as 6.5V,  one as 15V .

     

    Maybe need to voltage divide the driver voltage down a bit. 

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  • geralds
    0 geralds over 4 years ago

    Hi acdc90 ,

     

    ... hm, without a schematic representation, we cannot provide you with any specific help.

    Have you a schematic diagram that have drawn in voltage values, o-scope plotts, parameter values?

     

    Edit:

    The two IGBTs are not compatible. They have wide different values.

    https://www.farnell.com/datasheets/2085422.pdf

     

     

    Best Regards

    Gerald

    ---

    Attachments:
    imageMG75Q2YS50.pdf
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  • baldengineer
    0 baldengineer over 4 years ago in reply to robogary

    In fairness, both list 20V as an Absolute Max. And both show multiple application graphs below 20V…

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  • robogary
    0 robogary over 4 years ago in reply to baldengineer

    Sweet, thanks ! A possible failure mode eliminated. 

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  • acdc90
    0 acdc90 over 4 years ago in reply to baldengineer

    Hello again

    i have drawn a diagram and attached it

    which shows only using half of bridge unit

    then gone back and measured the voltage supply to the npn/pnp transister driver pair only at 6.8v

    now think the lack of volts is not turning SKM hard on

    i don't think this is a rise/fall issue

    any comments welcome

    thankyou for looking

    Attachments:
    imageigbt wiring.pdf
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  • alif42636
    0 alif42636 over 4 years ago in reply to geralds

    HAI. May i know the function of this SEMIKRON SKBB 500/445-4.. To convert AC to DC or others?

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  • jc2048
    0 jc2048 over 4 years ago

    imageimage

     

    The threshold of the Toshiba part is lower and the transconductance is higher than the Semikron device.

     

    I drew the 40A case, and then realised it would have been easier just to point out that the Toshiba part manages 100A at 8V gate drive and the Semikron part needs over 10V at that current, which you can quickly see from the curves.

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