International Rectifier today introduced a family of 25 V and 30 V Power MOSFETs intended for Industrial Point-of-Load (PoL) applications.
The devices feature IR’s HEXFET MOSFET silicon in a new PQFN 3 x 3 package said to enable up to 60 percent higher load current capability than standard PQFN 3 x 3 parts while overall package resistance is significantly reduced to deliver low on-state resistance (RDS(on)). According to IR, in addition to the low RDS(on), the new PQFN package offers enhanced thermal conductivity as well as improved reliability and is qualified to industrial standard and moisture sensitivity level 1 (MSL1).
The new PQFN package technology is also applied to 5 x 6 mm footprint devices enabling designs requiring more current without the need for additional footprint compared to standard PQFN 5 x 6 devices.
With a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques.
Interested? You can obtain the IRFHM830D by clicking herehere.