The main requirement for space-qualified components is the ability to withstand the radiation present throughout space, from sources such as the Van Allen radiation belts, solar winds and flares, and galactic cosmic rays
Radiation hardened, or rad-hard, devices are capable of operating in this environment with a long life time when submitted to gamma rays and to heavy ions. In the case of MOSFETs, this is achieved by utilizing specific design and technology trimming to withstand exposure to radiation and to minimize the tendency for important parameters such as threshold voltage, leakage currents and dynamic characteristics to drift under exposure. Devices are subjected to tests such as Co60 gamma rays and exposure to heavy ions, which are formally defined in specifications such as ESCC22900 and ESCC25100. All electronic components must pass these tests to gain ESCC (European Space Components Coordination) qualification.
STMicroelectronics has introduced the first members of a family of power transistors that it reports are fully qualified for use in electronic subsystems onboard satellites and launchers. The new radiation-hardened power MOSFET family spans current ratings from 6A to 80A and comprises five N-channel and P-channel devices, including: the STRH100N10 and STRH8N10 and STRH40P10, which offer voltage ratings of 100V; and the STRH100N6 and STRH40N6 with voltage ratings of 60V. The 100-volt P-channel device has a current rating of 34A. With low gate charge, a characteristic of ST's STripFET technology, they are suitable for use in DC power modules such as motor controllers and linear regulators, as well as line switches and e-fuses for current limiting.
Radiation hardened, or rad-hard, devices are capable of operating in this environment with a long life time when submitted to gamma rays and to heavy ions. In the case of MOSFETs, this is achieved by utilizing specific design and technology trimming to withstand exposure to radiation and to minimize the tendency for important parameters such as threshold voltage, leakage currents and dynamic characteristics to drift under exposure. Devices are subjected to tests such as Co60 gamma rays and exposure to heavy ions, which are formally defined in specifications such as ESCC22900 and ESCC25100. All electronic components must pass these tests to gain ESCC (European Space Components Coordination) qualification.
STMicroelectronics has introduced the first members of a family of power transistors that it reports are fully qualified for use in electronic subsystems onboard satellites and launchers. The new radiation-hardened power MOSFET family spans current ratings from 6A to 80A and comprises five N-channel and P-channel devices, including: the STRH100N10 and STRH8N10 and STRH40P10, which offer voltage ratings of 100V; and the STRH100N6 and STRH40N6 with voltage ratings of 60V. The 100-volt P-channel device has a current rating of 34A. With low gate charge, a characteristic of ST's STripFET technology, they are suitable for use in DC power modules such as motor controllers and linear regulators, as well as line switches and e-fuses for current limiting.
The STRHxxxN10, STRHxxxN6 and STRH40P10 family are available now to EM (Engineering Model) or ESCC flight quality level, in TO254-AA and TO-39 through-hole packages. An SMD.5 surface-mount configuration is also offered. The STRH100N10 is qualified to the ESCC 5205/021 specification and the other products are expected to be ESCC qualified in H2 2011.