NXP - 2N7002PV2N7002PV - MOSFET, NN CH, 60V, 0.35A, SOT666 | Buy Now!Buy Now!
General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- AEC-Q101 qualified
Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
Product Information
- MOSFET, NN CH, 60V, 0.35A, SOT666
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 350mA
- Drain Source Voltage Vds: 60V
- On Resistance Rds(on): 1ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs Typ: 1.75V
- Power
- RoHS Compliant: Yes
| Man Part No. | Description |
| 2N7002PV2N7002PV | MOSFET, NN CH, 60V, 0.35A, SOT666 |