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  • plastic
  • transistors
  • rf
  • nxp
  • packages
Related

New plastic packages for RF power transistors

GardenState
GardenState over 14 years ago
NXP Semiconductors has launched of a line of overmolded plastic (OMP) RF power devices with peak powers ranging from 2.5 to 200 Watts. The new range of OMP devices complements NXP’s range of products in ceramic packages, Compared to ceramic, overmolded plastic can reduce the overall BOM cost by 20 percent, according to NXP, offering customers a clear choice in cost versus performance for more cost-sensitive applications,

 
NXP’s OMP roadmap covers the following frequency ranges and applications: 10 – 500-MHz ISM, 470 860-MHz broadcast, 700 – 2200-MHz GSM, WCDMA telecom, 2300 – 2700-MHz LTE telecom, 2.45 GHz ISM, and even products for the 2700 – 3500-MHz S-band. Product types will extend to all existing categories: discrete pre-drivers (2.5 – 10 W), drivers (20 – 45 W), MMICs (20 – 60 W), finals (50 - 200 W) and integrated Doherty devices (50 – 110 W).

 
OMP products up to 10W will utilize NXP’s existing IC packages, with new footprint packages developed for higher powers. For customers using full surface mount assembly, gull-wing versions will be available in addition to traditional straight-lead versions. A limited selection of devices is available today as engineering samples, with volume production scheduled to start in Q4 2011.
 
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