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Blog Graphene transistor from Nobel Prize winner
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  • Author Author: Catwell
  • Date Created: 6 Feb 2012 8:28 PM Date Created
  • Views 589 views
  • Likes 1 like
  • Comments 2 comments
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Graphene transistor from Nobel Prize winner

Catwell
Catwell
6 Feb 2012
image
Graphene sheet concept art from James Hedberg
 
Why has Graphene not over taken Silicon for use in electronics?
 
 
Graphene is a single layer of carbon atoms that are only one molecule thick and have extraordinary characteristics. It is stronger than diamonds, can conduct electricity better than copper, and is impenetrable to gases and liquids. The low resistance it offers can create new and better transistors and circuits. The exceptional conductivity allows electrons to flow quicker than the modernly used silicon transistors.
 
 
However, with the incredible speed also comes another problem. For transistors to work they have to have a distinct on and off state. Creating a transistor with a consistent off state is difficult due to the great conductivity of the substance. Even with sheets as thin as one molecule electrons often filter through when  in the off state. The band-gap cannot get large enough to be effective.
 
 
One man, Konstantin Novoselov, leading a group of researchers is working to create an efficient graphene based transistor. His work on Graphene in 2010 helped him, with colleague Andre Geim, win the Nobel Prize in Physics. Currently they are working to develop a transistor by placing a layer of molybdenum in between two sheets of graphene. The molybdenum is an excellent insulator and stops electrons from passing over while the transistor is in the off state. Further research and experimentation is still needed. Successfully creating a graphene transistor could significantly expand our capabilities with hardware engineering.
 
 
Take the 155Ghz Graphene transistor as an example of the possibilities.
 
 
Cabe
http://twitter.com/Cabe_e14
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  • DAB
    DAB over 13 years ago

    Hi Cabe,

     

    Getting steady states could just be a matter of technic.  It may be possible to stimulate individual graphene nodes to set their electrons into a high or low state using lasers.  It should be possible to use laser frequencies for setting the states and use the electrostatic interface to find the individual bit states.

     

    Either way, this technology is moving towards practical applications.

    It will be interesting to see what they come up with next.

     

    DAB

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  • DAB
    DAB over 13 years ago

    Hi Cabe,

     

    Getting steady states could just be a matter of technic.  It may be possible to stimulate individual graphene nodes to set their electrons into a high or low state using lasers.  It should be possible to use laser frequencies for setting the states and use the electrostatic interface to find the individual bit states.

     

    Either way, this technology is moving towards practical applications.

    It will be interesting to see what they come up with next.

     

    DAB

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  • Catwell
    Catwell over 13 years ago in reply to DAB

    The band-gap ratio for graphene  is around 30.  The larger the band gap, the more of an insulator the  material becomes.  For comparison, the band gap of silicon is 1.11.

     

    Molybdenite might be a better option all together: Molybdenite to replace silicon, and the 3-atom thick transistor

    It has everything needed to replace silicon now.

     

    Cabe

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