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Arduino Forum Learning about H-bridges and transistors
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  • h-bridge
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Related

Learning about H-bridges and transistors

ovidiub13
ovidiub13 over 9 years ago

I'm trying to learn about transistors and H bridges towards a final goal of controlling a bipolar stepper motor with Arduino.

 

I've done the following half H-bridge in the process of learning:

image

My first question: Why can't I use a single resistor to connect the base of both transistors to ground?

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  • strb
    strb over 9 years ago +1 suggested
    I'm not sure that this schematic works... the led isn't reverse polarized? Anyway use a pnp as pullup transistor and a npn as pulldown, it's a good thing to put also a limiter resistor to control the current…
  • strb
    strb over 9 years ago in reply to clem57 +1
    Great "how link" clem57
  • mcb1
    mcb1 over 9 years ago in reply to ovidiub13 +1 suggested
    What I'm having issues understanding is how transistors work You can consider a transistor as a switch (in this case they are either ON or OFF) The control part of the switch is the base to emitter (NPN…
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  • ovidiub13
    0 ovidiub13 over 9 years ago

    I fixed it. I think.

     

    I've added a resistor for the LEDs, and 2 bigger resistors for the transistors bases to + to make sure the gates are closed when the button is not pressed.

     

    image

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  • not2xs
    0 not2xs over 9 years ago in reply to ovidiub13

    If you want to get on to efficiently and reliably driving the stepper motor then as others have said a chip will be easiest; otherwise you will need to do everything the chip designer did. If you want to learn about H-bridges, the links supplied by mcb1 and Clem show good explanations. If you want to understand how transistors work, here is a quick but somewhat thorough description:

     

    The base to emitter connection works just like a semiconductor diode. Perhaps easiest to think of it as a variable resistor where the resistance changes with the voltage. Like a diode, if you try to drive it "backwards" it behaves like a near infinite resistance, and near no current flows. If you try to drive it "forwards", like a semiconductor diode if the voltage is less than about a half a volt it still behaves like a near infinite resistance, but somewhere a bit above that voltage the resistance starts to drop, until by around 0.7V (for silicon devices) the resistance is very low, nearing zero-ohms (except for that 0.7V lurking inside). The exact voltage between base and emitter where this happens will vary, mostly with temperature. That is why you typically connect an external resistor to the base, to control how much current flows there, otherwise the transistor will allow more than it can handle.

     

    The next thing to know about a transistor is it has a parameter (properly specified as h-subscript-fe if your fonts will allow that) I will abbreviate as h-fe here. This is the ratio of how much current will flow in the collector relative to how much in the base, if the rest of the circuit will allow it. Typically the h-fe will be somewhere around 1000 to 100000, and it will vary wildly with temperature and from individual transistor to transistor (even if they have the same part number). This means that the current in the collector will be 1000 to 100000 times the amount of current in the base - IF THE REST OF THE CIRCUIT WILL ALLOW IT. The current in the transistor's emitter is the sum of the current in the base and collector. However, when using transistors as switches, you usually want to drive them into "saturation". This is where the circuit cannot manage the collector to base current ratio and the collector to emitter voltage goes really low (below half a volt) while the transistor is trying really hard. With very low collector to emitter voltage, not much power gets consumed inside the transistor meaning it does not get as hot and more power is available to go into the load.

     

    There are two common configurations for connecting up a transistor, and you have both in your circuit above. One frequently used way is called "common emitter", here the emitter is wired to some known voltage, the base is wired to have some current flow into it (or not) while considering that 0.7V drop, and the "load" is connected to the collector where a higher amount of current is switched. Another common way is called "emitter follower", where the base is driven to a known voltage, the "load" is connected to the emitter, and the emitter will stay around 0.7V away from the base voltage with any needed extra current to achieve that coming through the collector. To get an emitter-follower into saturation, the base will need to be driven to a voltage beyond the battery voltage for the rest of the circuit. This is why it is most common to suggest combining NPN and PNP transistors into the H-bridge, they can all be wired common-emitter and saturated without using multiple supply voltages.

     

    If you want to use transistors as amplifiers instead of switches it gets more difficult due to having to deal with the variations mentioned above. When dealing with motors or coils you should be aware of the "kickback" voltage spike they produce, hence all the extra diodes (and sometimes capacitors) in well-designed H-bridges.

     

    If this is what you were interested in learning, then good for you.

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  • jc2048
    0 jc2048 over 9 years ago in reply to not2xs

    "Typically the h-fe will be somewhere around 1000 to 100000"

     

    I would disagree with that statement. A few hundred would be more typical for hFE (datasheets usually quote hFE rather than hfe) for small-signal use (collector current 10mA, or so). 100-600 is a realistic range for real devices you might encounter. With medium- and high-power devices, you'd normally be looking at less than 100 once you get up to collector currents of a few amps.

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  • Robert Peter Oakes
    0 Robert Peter Oakes over 9 years ago in reply to jc2048

    The gains etc are based on the devices shown in the posted schematics, looking at manufacturer data sheets, to exceed these ratings may be possible but you risk thermal and other damage to the device. But as you say, there are other devices you can use, in my case I would go with MOSFETS or other versions of FETs for the switches , they have other issues to deal with, I just happen to like them image

     

    Peter

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  • Robert Peter Oakes
    0 Robert Peter Oakes over 9 years ago in reply to jc2048

    The gains etc are based on the devices shown in the posted schematics, looking at manufacturer data sheets, to exceed these ratings may be possible but you risk thermal and other damage to the device. But as you say, there are other devices you can use, in my case I would go with MOSFETS or other versions of FETs for the switches , they have other issues to deal with, I just happen to like them image

     

    Peter

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