I am having an issue with a IXYS paired mosfet chip, FMP26). It is being switched at 1-2Mhz. A 12A driver, EL7158ISZEL7158ISZ, is delivering more current to the larger gate capacitance at higher frequencies. (Under 500khz not a concern.) A 10V output square wave at 1Mhz is applied to the mosfet gates.
As I gradually increase the voltage on the P channel source up to 50-60V, the mosfet gradually gets hot, and this is without a load on it. Now this effect is reduced by lowering the resistor (100 ohm in attached figure) value which is biasing the gate, reduces VGS by creating DC offset on the gate which lifts the pulse waveform. I am not sure what is going on though and how to properly bias this as 100 ohms is very low. Shouldn't I be able to switch it with these VGS?
Dig
Attached is the datasheet